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This paper demonstrates a novel approach to the design of D-band power dividers, capitalizing on the benefits of Substrate Integrated Waveguide (SIW) technology in 100-μm thick SiC substrate. By leveraging the unique characteristics of SIW and utilizing silicon carbide as the substrate material, an average insertion loss as low as 0.26 dB, and average return loss of up to 24 dB has been achieved in simulation in D-band. Although D-band dividers employing coplanar waveguides and microstrip lines have been reported, to the best of our acknowledge, this is the first work on D-band SIW power dividers. The SIW technology is compatible with GaN-on-SiC MMIC fabrication process flows, and provides a novel platform for the integration of low-loss millimeter-wave combiners with III-N based electronics. 

This is the first report of a distributed amplifier (DA) realized through monolithic integration of transistors with a substrate-integrated waveguide (SIW). The DA uses a stepped-impedance microstrip line as the input divider like in conventional DAs, but uses a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with the phase successively delayed by 90° at the fundamental frequency. The HEMTs are separated by a half wavelength at the second harmonic frequency in the SIW, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the GaN HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the DA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 68 GHz and 10 dBm, the output at 136 GHz is 24-dB above the fundamental. Under an input of 68 GHz and 20 dBm, the output at 136 GHz is 14 dBm, with a conversion loss of 6 dB and a power consumption of 882 mW. This proof-of-principle demonstration opens the path to improving the gain, power and efficiency of DAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips. 

For millimeter-wave power applications, GaN high-electron mobility transistors (HEMTs) are often grown epitaxially on a high-purity semi-insulating c-axis 4H-SiC substrate. For these anisotropic hexagonal materials, the design and modeling of microstrip and coplanar interconnects require detailed knowledge of both the ordinary permittivity ε⊥ and the extraordinary permittivity εǁ perpendicular and parallel, respectively, to the c-axis. However, conventional dielectric characterization techniques make it difficult to measure εǁ alone or to separate εǁ from ε⊥. As a result, there is little data for εǁ, especially at millimeter-wave frequencies. This work demonstrates techniques for characterizing εǁ of 4H SiC using substrate-integrated waveguides (SIWs) or SIW resonators. The measured εǁ on seven SIWs and eleven resonators from 110 to 170 GHz is within ±1% of 10.2. Because the SIWs and resonators can be fabricated on the same SiC substrate together with HEMTs and other devices, they can be conveniently measured on-wafer for precise material-device correlation. Such permittivity characterization techniques can be extended to other frequencies, materials, and orientations.